Physics, modeling and design of RF and optoelectronic integrated circuit and sensor devices. Advanced small and large signal models for rf passives, diodes, high speed deep submicron mosfets, high electron mobility transistors, silicon-germanium/indium phosphide/gallium arsenide heterojunction bipolar transistors, photovoltaic cells, CMOS/CCD pixel photosensors, light emitting diodes, and laser diodes. Optimum noise and power matching networks, short channel effects, noise models, noise parameters, noise circles, ft, fmax, quality factor. Examples of rf (mixers, LNA, oscillators, power detectors) and imaging/sensor (focal plane arrays, active/passive pixel sensors) circuits and systems. [Offered: S] Prereq: ECE 209, (231 or 331); Level at least 4A Computer Engineering or Electrical Engineering
