Review of band theory and doped semiconductors in thermal equilibrium, charge neutrality, mass action law, recombination and transport mechanisms, Boltzmann relations. Device theory and modeling of p-n junction diode and derivation of dc and ac characteristics, charge storage effects. Pinciples, device theory and modeling of MOSFETs and the derivation of threshold voltage, dc current characteristics, small signal ac models. Principles of Bipolar transistor and derivation of dc and ac terminal characteristics, equivalent circuits. [Offered: W, S] Prereq: ECE 209; Level at least 3A Computer Engineering or Electrical Engineering. Antireq: ECE 231
